Reduction of drift of operating point in lithium niobate-based integrated-optical circuit

This work is devoted to the study of drift operating point integrated-optical circuits based on proton-exchange waveguides in lithium niobate crystal with a recovered structure near-surface layer. Recovered damaged layer wafer was carried out using pre-annealing at temperature 500 °C. Drift characterized by constant change optical output power when bias voltage applied electrodes or changes. leads decrease short-term and long-term drifts circuits. Crystal factor investigated crystal.